Renesas P-Channel MOSFET, 10 A, 60 V, 3-Pin DPAK-L 2SJ529L-E
- RS Stock No.:
- 121-6880
- Mfr. Part No.:
- 2SJ529L-E
- Brand:
- Renesas Electronics
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
- RS Stock No.:
- 121-6880
- Mfr. Part No.:
- 2SJ529L-E
- Brand:
- Renesas Electronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Renesas Electronics | |
Channel Type | P | |
Maximum Continuous Drain Current | 10 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | DPAK-L | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 240 mΩ | |
Channel Mode | Enhancement | |
Maximum Power Dissipation | 20 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Number of Elements per Chip | 1 | |
Width | 2.3mm | |
Length | 6.5mm | |
Height | 7.2mm | |
Forward Diode Voltage | 1.2V | |
Select all | ||
---|---|---|
Brand Renesas Electronics | ||
Channel Type P | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type DPAK-L | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 240 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 20 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 2.3mm | ||
Length 6.5mm | ||
Height 7.2mm | ||
Forward Diode Voltage 1.2V | ||
- COO (Country of Origin):
- MY
P-Channel MOSFET, Renesas Electronics (NEC)
MOSFET Transistors, Renesas Electronics (NEC)