N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-220 STMicroelectronics STP18N60DM2
- RS Stock No.:
- 111-6474
- Mfr. Part No.:
- STP18N60DM2
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£9.79
(exc. VAT)
£11.75
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £1.958 | £9.79 |
| 10 - 95 | £1.668 | £8.34 |
| 100 - 495 | £1.302 | £6.51 |
| 500 + | £1.098 | £5.49 |
*price indicative
- RS Stock No.:
- 111-6474
- Mfr. Part No.:
- STP18N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 15.75mm | |
| Series | MDmesh DM2 | |
| Forward Diode Voltage | 1.6V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Transistor Material Si | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 15.75mm | ||
Series MDmesh DM2 | ||
Forward Diode Voltage 1.6V | ||
Minimum Operating Temperature -55 °C | ||