STMicroelectronics MDmesh DM2 N-Channel MOSFET, 12 A, 600 V, 3-Pin D2PAK STB18N60DM2
- RS Stock No.:
- 111-6459P
- Mfr. Part No.:
- STB18N60DM2
- Brand:
- STMicroelectronics
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Subtotal 10 units (supplied on a continuous strip)*
£19.54
(exc. VAT)
£23.45
(inc. VAT)
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- Shipping from 13 April 2026
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Units | Per unit |
|---|---|
| 10 - 95 | £1.954 |
| 100 - 495 | £1.532 |
| 500 + | £1.292 |
*price indicative
- RS Stock No.:
- 111-6459P
- Mfr. Part No.:
- STB18N60DM2
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 12 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | MDmesh DM2 | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 290 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 20 nC @ 10 V | |
| Length | 9.35mm | |
| Width | 10.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.6mm | |
| Forward Diode Voltage | 1.6V | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 12 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh DM2 | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 290 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 20 nC @ 10 V | ||
Length 9.35mm | ||
Width 10.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 4.6mm | ||
Forward Diode Voltage 1.6V | ||
- COO (Country of Origin):
- CN
N-Channel MDmesh DM2 Series, STMicroelectronics
The MDmesh DM2 MOSFETs offer low RDS(on) and with the Improved diode reverse recovery time for efficiency, this series is optimised for full-bridge phase-shifted ZVS topologies.
High dV/dt capability for improved system reliability
AEC-Q101 qualified
AEC-Q101 qualified
MOSFET Transistors, STMicroelectronics