N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 Infineon IPP60R190P6XKSA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

190 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

151 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Length

10.36mm

Transistor Material

Si

Width

4.57mm

Typical Gate Charge @ Vgs

37 nC @ 10 V

Height

15.95mm

Series

CoolMOS P6

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

0.9V