N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 Infineon IPP60R190P6XKSA1

Technical Reference

Discontinued product

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	20 A
Maximum Drain Source Voltage	650 V
Package Type	TO-220
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	190 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.5V
Minimum Gate Threshold Voltage	3.5V
Maximum Power Dissipation	151 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Width	4.57mm
Transistor Material	Si
Maximum Operating Temperature	+150 °C
Number of Elements per Chip	1
Length	10.36mm
Typical Gate Charge @ Vgs	37 nC @ 10 V
Minimum Operating Temperature	-55 °C
Series	CoolMOS P6
Forward Diode Voltage	0.9V
Height	15.95mm