Infineon OptiMOS P P-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK-7 IPB180P04P4L02ATMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

180 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS P

Package Type

D2PAK-7

Mounting Type

Surface Mount

Pin Count

7

Maximum Drain Source Resistance

3.9 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

150 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +16 V

Width

9.25mm

Number of Elements per Chip

1

Transistor Material

Si

Typical Gate Charge @ Vgs

220 nC @ 10 V

Maximum Operating Temperature

+175 °C

Length

10mm

Minimum Operating Temperature

-55 °C

Height

4.4mm

Forward Diode Voltage

1.3V