N-Channel MOSFET, 17.5 A, 700 V, 3-Pin TO-220FP Infineon IPA65R190CFDXKSA1
- RS Stock No.:
- 110-7738
- Mfr. Part No.:
- IPA65R190CFDXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.45
(exc. VAT)
£12.55
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £2.09 | £10.45 |
| 25 - 95 | £1.676 | £8.38 |
| 100 - 245 | £1.466 | £7.33 |
| 250 - 495 | £1.372 | £6.86 |
| 500 + | £1.308 | £6.54 |
*price indicative
- RS Stock No.:
- 110-7738
- Mfr. Part No.:
- IPA65R190CFDXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 17.5 A | |
| Maximum Drain Source Voltage | 700 V | |
| Package Type | TO-220FP | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Typical Gate Charge @ Vgs | 68 nC @ 10 V | |
| Length | 10.36mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Width | 4.57mm | |
| Transistor Material | Si | |
| Series | CoolMOS CFD | |
| Minimum Operating Temperature | -55 °C | |
| Height | 15.95mm | |
| Forward Diode Voltage | 0.9V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 17.5 A | ||
Maximum Drain Source Voltage 700 V | ||
Package Type TO-220FP | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Typical Gate Charge @ Vgs 68 nC @ 10 V | ||
Length 10.36mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Width 4.57mm | ||
Transistor Material Si | ||
Series CoolMOS CFD | ||
Minimum Operating Temperature -55 °C | ||
Height 15.95mm | ||
Forward Diode Voltage 0.9V | ||