N-Channel MOSFET, 3.7 A, 650 V, 3-Pin DPAK Infineon IPD60R2K1CEAUMA1

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.7 A

Maximum Drain Source Voltage

650 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

2.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

6.7 nC @ 10 V

Length

6.73mm

Transistor Material

Si

Width

6.22mm

Maximum Operating Temperature

+150 °C

Height

2.41mm

Series

CoolMOS CE

Forward Diode Voltage

0.9V

Minimum Operating Temperature

-40 °C