P-Channel MOSFET, 80 A, 30 V, 3-Pin DPAK Infineon IPD80P03P4L07ATMA1

Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

12 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-16 V, +5 V

Typical Gate Charge @ Vgs

63 nC @ 10 V

Width

6.22mm

Length

6.73mm

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Number of Elements per Chip

1

Series

OptiMOS P

Forward Diode Voltage

1.3V

Minimum Operating Temperature

-55 °C

Height

2.41mm