Name: N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180N04S400ATMA1
Brand: Infineon
SKU: 110-7420
Price: 3.69 GBP
Availability: OutOfStock

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	180 A
	Maximum Drain Source Voltage	40 V
	Package Type	D2PAK (TO-263)
	Mounting Type	Surface Mount
	Pin Count	7
	Maximum Drain Source Resistance	980 μΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	220 nC @ 10 V
	Length	10mm
	Maximum Operating Temperature	+175 °C
	Width	9.25mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Forward Diode Voltage	1.3V
	Height	4.4mm
	Series	OptiMOS T2
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 180 A
	Maximum Drain Source Voltage 40 V
	Package Type D2PAK (TO-263)
	Mounting Type Surface Mount
	Pin Count 7
	Maximum Drain Source Resistance 980 μΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 220 nC @ 10 V
	Length 10mm
	Maximum Operating Temperature +175 °C
	Width 9.25mm
	Number of Elements per Chip 1
	Transistor Material Si
	Forward Diode Voltage 1.3V
	Height 4.4mm
	Series OptiMOS T2
	Minimum Operating Temperature -55 °C

RoHS Status: Exempt

The Infineon OptiMOS has lowest switching and conduction power losses for highest thermal efficiency. It also has optimized total gate charge which enables smaller driver output stages.

AEC qualified

Green product

Ultra low Rds on

100 percent avalanche tested

N-Channel MOSFET, 180 A, 40 V, 7-Pin D2PAK Infineon IPB180N04S400ATMA1

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