Infineon CoolMOS E6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1

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Packaging Options:
RS Stock No.:
110-7172
Mfr. Part No.:
IPA60R190E6XKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

650 V

Series

CoolMOS E6

Package Type

TO-220 FP

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

440 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.5V

Minimum Gate Threshold Voltage

2.5V

Maximum Power Dissipation

34 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

4.9mm

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

63 nC @ 10 V

Length

10.65mm

Number of Elements per Chip

1

Forward Diode Voltage

0.9V

Height

16.15mm

Minimum Operating Temperature

-55 °C