Infineon CoolMOS E6 N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220 FP IPA60R190E6XKSA1
- RS Stock No.:
- 110-7172
- Mfr. Part No.:
- IPA60R190E6XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£7.60
(exc. VAT)
£9.10
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 400 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.52 | £7.60 |
| 25 - 45 | £1.444 | £7.22 |
| 50 - 120 | £1.30 | £6.50 |
| 125 - 245 | £1.168 | £5.84 |
| 250 + | £1.112 | £5.56 |
*price indicative
- RS Stock No.:
- 110-7172
- Mfr. Part No.:
- IPA60R190E6XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | TO-220 FP | |
| Series | CoolMOS E6 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 440 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.5V | |
| Minimum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 34 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 4.9mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Length | 10.65mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 16.15mm | |
| Forward Diode Voltage | 0.9V | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type TO-220 FP | ||
Series CoolMOS E6 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 440 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.5V | ||
Minimum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 34 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 4.9mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Length 10.65mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 16.15mm | ||
Forward Diode Voltage 0.9V | ||