N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CE
- RS Stock No.:
- 110-7159
- Mfr. Part No.:
- IPD80R1K4CE
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 12 units)*
£8.112
(exc. VAT)
£9.732
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 12 - 12 | £0.676 | £8.11 |
| 24 - 108 | £0.598 | £7.18 |
| 120 - 228 | £0.519 | £6.23 |
| 240 - 588 | £0.479 | £5.75 |
| 600 + | £0.453 | £5.44 |
*price indicative
- RS Stock No.:
- 110-7159
- Mfr. Part No.:
- IPD80R1K4CE
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3.9 A | |
| Maximum Drain Source Voltage | 800 V | |
| Package Type | TO-252 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.4 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 3.9V | |
| Minimum Gate Threshold Voltage | 2.1V | |
| Maximum Power Dissipation | 63 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 23 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Transistor Material | Si | |
| Minimum Operating Temperature | -55 °C | |
| Series | CoolMOS CE | |
| Forward Diode Voltage | 1.2V | |
| Height | 2.41mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 3.9 A | ||
Maximum Drain Source Voltage 800 V | ||
Package Type TO-252 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.4 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 3.9V | ||
Minimum Gate Threshold Voltage 2.1V | ||
Maximum Power Dissipation 63 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 23 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Transistor Material Si | ||
Minimum Operating Temperature -55 °C | ||
Series CoolMOS CE | ||
Forward Diode Voltage 1.2V | ||
Height 2.41mm | ||
RoHS Status: Exempt