N-Channel MOSFET, 3.9 A, 800 V, 3-Pin DPAK Infineon IPD80R1K4CE

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

3.9 A

Maximum Drain Source Voltage

800 V

Package Type

TO-252

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3.9V

Minimum Gate Threshold Voltage

2.1V

Maximum Power Dissipation

63 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Width

6.22mm

Length

6.73mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

23 nC @ 10 V

Forward Diode Voltage

1.2V

Height

2.41mm

Minimum Operating Temperature

-55 °C

Series

CoolMOS CE