N-Channel MOSFET, 80 A, 49 V, 7-Pin D2PAK-7 Infineon BTS282ZE3180AATMA2
- RS Stock No.:
- 110-7112
- Mfr. Part No.:
- BTS282ZE3180AATMA2
- Brand:
- Infineon
Subtotal (1 pack of 4 units)*
£24.26
(exc. VAT)
£29.112
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 4 + | £6.065 | £24.26 |
*price indicative
- RS Stock No.:
- 110-7112
- Mfr. Part No.:
- BTS282ZE3180AATMA2
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 80 A | |
| Maximum Drain Source Voltage | 49 V | |
| Package Type | D2PAK-7 | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance | 9.5 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1.2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 155 nC @ 10 V | |
| Width | 9.25mm | |
| Transistor Material | Si | |
| Series | TEMPFET | |
| Minimum Operating Temperature | -40 °C | |
| Forward Diode Voltage | 1.4V | |
| Height | 4.4mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 80 A | ||
Maximum Drain Source Voltage 49 V | ||
Package Type D2PAK-7 | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Maximum Drain Source Resistance 9.5 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1.2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 155 nC @ 10 V | ||
Width 9.25mm | ||
Transistor Material Si | ||
Series TEMPFET | ||
Minimum Operating Temperature -40 °C | ||
Forward Diode Voltage 1.4V | ||
Height 4.4mm | ||
RoHS Status: Not Applicable