Vishay TrenchFET N-Channel MOSFET, 266 A, 40 V Enhancement, 8-Pin PowerPAK SQJ140EP-T1_NE3
- RS Stock No.:
- 904-969
- Mfr. Part No.:
- SQJ140EP-T1_NE3
- Brand:
- Vishay
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 1 unit)*
£1.12
(exc. VAT)
£1.34
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 01 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £1.12 |
| 10 - 24 | £0.73 |
| 25 - 99 | £0.43 |
| 100 - 499 | £0.42 |
| 500 + | £0.41 |
*price indicative
- RS Stock No.:
- 904-969
- Mfr. Part No.:
- SQJ140EP-T1_NE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 266A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | TrenchFET | |
| Package Type | PowerPAK | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0021Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.1V | |
| Maximum Power Dissipation Pd | 263W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 49.2nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.15mm | |
| Standards/Approvals | ROHS | |
| Width | 4.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 266A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series TrenchFET | ||
Package Type PowerPAK | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0021Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.1V | ||
Maximum Power Dissipation Pd 263W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 49.2nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.15mm | ||
Standards/Approvals ROHS | ||
Width 4.9mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- GB
The Vishay power MOSFET provides reliable switching performance and efficient operation for automotive applications and demanding environments, ensuring optimal power management and enhanced device longevity.
AEC-Q101 qualified for automotive applications
TrenchFET Gen IV technology optimises switching characteristics
Low on-state resistance enhances overall efficiency
Wide operational temperature range of -55 to +175 °C
Related links
- Vishay SQJ140EP N-Channel MOSFET 40 V Enhancement, 4-Pin SO-8 SQJ140EP-T1_GE3
- Vishay TrenchFET P-Channel MOSFET -30 V Enhancement, 8-Pin PowerPAK SQJ951EP-T1_NE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS486CENW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SI7116BDN-T1-GE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ENW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ELNW-T1_GE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5408DP-T1-UE3
- Vishay TrenchFET N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK SO-8 SIR5404DP-T1-UE3