Microchip Half Bridge mSiC N channel-Channel SiC Power Module, 295 A, 3300 V Enhancement Mode MSCSM330AM07D3NG

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Subtotal (1 unit)*

£583.36

(exc. VAT)

£700.03

(inc. VAT)

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Units
Per unit
1 +£583.36

*price indicative

RS Stock No.:
854-515
Mfr. Part No.:
MSCSM330AM07D3NG
Brand:
Microchip
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Brand

Microchip

Product Type

SiC Power Module

Channel Type

N channel

Maximum Continuous Drain Current Id

295A

Maximum Drain Source Voltage Vds

3300V

Series

mSiC

Mount Type

Heatsink

Channel Mode

Enhancement Mode

Maximum Power Dissipation Pd

1918W

Minimum Operating Temperature

-40°C

Transistor Configuration

Half Bridge

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

The Microchip silicon carbide power module is a phase leg solution designed for high-voltage, high-current applications, leveraging Silicon Carbide technology for superior performance and reliability.

Features low RDS(on) for enhanced efficiency

Offers excellent thermal and power cycling reliability

Designed with a copper baseplate for improved heat dissipation

Incorporates a CTI600 plastic enclosure that promotes increased creepage and clearance

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