Vishay TrenchFET N-Channel Power MOSFET, 63 A, 650 V, 8-Pin PowerPAK SIHK031N60AE-T1GE3
- RS Stock No.:
- 851-497
- Mfr. Part No.:
- SIHK031N60AE-T1GE3
- Brand:
- Vishay
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£6.09
(exc. VAT)
£7.31
(inc. VAT)
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- Shipping from 05 April 2027
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £6.09 |
| 10 - 99 | £4.08 |
| 100 - 499 | £3.28 |
| 500 - 999 | £2.92 |
| 1000 + | £2.76 |
*price indicative
- RS Stock No.:
- 851-497
- Mfr. Part No.:
- SIHK031N60AE-T1GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 63A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PowerPAK | |
| Series | TrenchFET | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.04Ω | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 Qualified | |
| Height | 1.04mm | |
| Width | 5.25mm | |
| Length | 6.05mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 63A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PowerPAK | ||
Series TrenchFET | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.04Ω | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 Qualified | ||
Height 1.04mm | ||
Width 5.25mm | ||
Length 6.05mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- KR
The Vishay power MOSFET designed for high-performance switching applications, offering effective management of electrical loads with superior efficiency and low energy losses.
Utilises fourth generation E series technology for enhanced performance
Offers low on-state resistance, reducing energy dissipation
Capable of handling high effective capacitance for reliable operation
Provides significant reduction in both switching and conduction losses
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