onsemi BSS N channel-Channel MOSFET, 0.22 A, 50 V, 3-Pin SOT-23-3 BSS138-G
- RS Stock No.:
- 838-663
- Mfr. Part No.:
- BSS138-G
- Brand:
- onsemi
Bulk discount available
View bulk pricing optionsSubtotal (1 tape of 50 units)*
£5.80
(exc. VAT)
£6.95
(inc. VAT)
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- Shipping from 28 December 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 50 - 450 | £0.116 | £5.80 |
| 500 - 2450 | £0.094 | £4.70 |
| 2500 - 4950 | £0.072 | £3.60 |
| 5000 + | £0.057 | £2.85 |
*price indicative
- RS Stock No.:
- 838-663
- Mfr. Part No.:
- BSS138-G
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 0.22A | |
| Maximum Drain Source Voltage Vds | 50V | |
| Package Type | SOT-23-3 | |
| Series | BSS | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6Ω | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 2.4nC | |
| Forward Voltage Vf | 1.4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.36W | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.3mm | |
| Length | 2.9mm | |
| Height | 1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 0.22A | ||
Maximum Drain Source Voltage Vds 50V | ||
Package Type SOT-23-3 | ||
Series BSS | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6Ω | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 2.4nC | ||
Forward Voltage Vf 1.4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.36W | ||
Maximum Operating Temperature 150°C | ||
Width 1.3mm | ||
Length 2.9mm | ||
Height 1mm | ||
Automotive Standard No | ||
The onsemi N-Channel enhancement mode field effect transistor is designed for efficient performance in low voltage applications. It delivers reliable switching capabilities and minimal on-state resistance for a variety of electronic uses.
Supports a continuous drain current of 0.22 A and a pulsed drain current of 0.88 A
Exhibits a low on-resistance of 3.5 Ω at gate voltage of 10 V
Operates effectively within a temperature range of -55°C to +150°C
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