Vishay SISS N channel-Channel Single MOSFETs, 14.2 A, 100 V Enhancement Mode, 8-Pin P SISS110DN-T1-GE3
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Brand:
- Vishay
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£0.86
(exc. VAT)
£1.03
(inc. VAT)
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- Shipping from 18 August 2027
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Units | Per unit |
|---|---|
| 1 - 9 | £0.86 |
| 10 - 99 | £0.53 |
| 100 - 499 | £0.35 |
| 500 - 999 | £0.27 |
| 1000 + | £0.24 |
*price indicative
- RS Stock No.:
- 829-345
- Mfr. Part No.:
- SISS110DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 14.2A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Series | SISS | |
| Package Type | P | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.054Ω | |
| Channel Mode | Enhancement Mode | |
| Typical Gate Charge Qg @ Vgs | 6.5nC | |
| Maximum Power Dissipation Pd | 24W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.30mm | |
| Length | 3.30mm | |
| Standards/Approvals | RoHS Compliant | |
| Height | 1.04mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 14.2A | ||
Maximum Drain Source Voltage Vds 100V | ||
Series SISS | ||
Package Type P | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.054Ω | ||
Channel Mode Enhancement Mode | ||
Typical Gate Charge Qg @ Vgs 6.5nC | ||
Maximum Power Dissipation Pd 24W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 3.30mm | ||
Length 3.30mm | ||
Standards/Approvals RoHS Compliant | ||
Height 1.04mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- IL
The Vishay N-Channel MOSFET delivers efficient power management solutions with excellent conduction capabilities. Designed for demanding applications, it offers superior switching and thermal performance.
Features TrenchFET Gen IV technology for superior efficiency and performance
Guaranteed 100% RDS(on) and UIS tested for reliability in operation
Continuous drain current rating of 11 A ensures robust delivery
Optimised for low RDS(on) values, enhancing thermal performance
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