Microchip mSiC N channel-Channel MOSFET, 27 A, 3300 V, 4-Pin TO-247-4L MSC080SMA330B4N
- RS Stock No.:
- 813-825
- Mfr. Part No.:
- MSC080SMA330B4N
- Brand:
- Microchip
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£47.38
(exc. VAT)
£56.86
(inc. VAT)
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- 2 unit(s) ready to ship
- Plus 30 unit(s) shipping from 26 January 2027
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Units | Per unit |
|---|---|
| 1 + | £47.38 |
*price indicative
- RS Stock No.:
- 813-825
- Mfr. Part No.:
- MSC080SMA330B4N
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET | |
| Channel Type | N channel | |
| Maximum Continuous Drain Current Id | 27A | |
| Maximum Drain Source Voltage Vds | 3300V | |
| Series | mSiC | |
| Package Type | TO-247-4L | |
| Mount Type | Screw | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 80mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 161nC | |
| Maximum Power Dissipation Pd | 439W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Width | 23.6mm | |
| Length | 16.13mm | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET | ||
Channel Type N channel | ||
Maximum Continuous Drain Current Id 27A | ||
Maximum Drain Source Voltage Vds 3300V | ||
Series mSiC | ||
Package Type TO-247-4L | ||
Mount Type Screw | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 80mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 161nC | ||
Maximum Power Dissipation Pd 439W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Width 23.6mm | ||
Length 16.13mm | ||
Height 5.21mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip N Channel mSiC MOSFET is a high-performance electronic switch designed to operate efficiently at high voltages and temperatures. It primarily functions to regulate power in Advanced applications.
Low capacitances and gate charge enhance switching efficiency
Rapid switching speed ensures optimal performance with reduced losses
Stable operation at high junction temperatures up to 150 °C
Reliable body diode contributes to system stability and longevity
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