STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 58 A, 650 V Enhancement Mode, 4-Pin PG-TO-247
- RS Stock No.:
- 800-466
- Mfr. Part No.:
- STW65N040M9-4
- Brand:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 unit)*
£6.38
(exc. VAT)
£7.66
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 300 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £6.38 |
| 10 - 49 | £6.19 |
| 50 - 99 | £6.00 |
| 100 + | £5.17 |
*price indicative
- RS Stock No.:
- 800-466
- Mfr. Part No.:
- STW65N040M9-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 58A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | PG-TO-247 | |
| Series | STH285N10F8-6AG | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 37mΩ | |
| Channel Mode | Enhancement Mode | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 110nC | |
| Maximum Power Dissipation Pd | 321W | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Maximum Operating Temperature | 150°C | |
| Length | 15.9mm | |
| Height | 21.1mm | |
| Standards/Approvals | ECOPACK | |
| Width | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 58A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type PG-TO-247 | ||
Series STH285N10F8-6AG | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 37mΩ | ||
Channel Mode Enhancement Mode | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 110nC | ||
Maximum Power Dissipation Pd 321W | ||
Maximum Gate Source Voltage Vgs 30V | ||
Maximum Operating Temperature 150°C | ||
Length 15.9mm | ||
Height 21.1mm | ||
Standards/Approvals ECOPACK | ||
Width 5.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area.
Very low FOM (RDS(on)·Qg)
Higher dv/dt capability
Excellent switching performance
Easy to drive
100% avalanche tested
Excellent switching performance thanks to the extra driving source pin