STMicroelectronics STH285N10F8-6AG N channel-Channel Power MOSFET, 96 A, 60 V Enhancement Mode, 8-Pin PowerFLAT
- RS Stock No.:
- 800-463
- Mfr. Part No.:
- STL130N6LF7
- Brand:
- STMicroelectronics
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Units | Per unit |
|---|---|
| 1 - 24 | £0.45 |
| 25 - 99 | £0.44 |
| 100 - 499 | £0.43 |
| 500 - 999 | £0.36 |
| 1000 + | £0.34 |
*price indicative
- RS Stock No.:
- 800-463
- Mfr. Part No.:
- STL130N6LF7
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N channel | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 96A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STH285N10F8-6AG | |
| Package Type | PowerFLAT | |
| Mount Type | Through Hole | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Channel Mode | Enhancement Mode | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 93W | |
| Typical Gate Charge Qg @ Vgs | 7.4nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 1mm | |
| Standards/Approvals | ECOPACK | |
| Width | 5mm | |
| Length | 6mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N channel | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 96A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STH285N10F8-6AG | ||
Package Type PowerFLAT | ||
Mount Type Through Hole | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Channel Mode Enhancement Mode | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 93W | ||
Typical Gate Charge Qg @ Vgs 7.4nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Height 1mm | ||
Standards/Approvals ECOPACK | ||
Width 5mm | ||
Length 6mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel Power MOSFET utilizes STripFET F7 technology with an enhanced trench gate structure that results in very low on-state resistance, while also reducing internal capacitance and gate charge for Faster and more efficient switching.
Among the lowest RDS(on) on the market
Excellent FoM (figure of merit)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Logic level VGS(th)