Vishay SQ4917CEY P-Channel MOSFET, -8 A, 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_BE3
- RS Stock No.:
- 735-121
- Mfr. Part No.:
- SQ4917CEY-T1_BE3
- Brand:
- Vishay
Bulk discount available
Subtotal (1 tape of 1 unit)*
£1.64
(exc. VAT)
£1.97
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 August 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £1.64 |
| 10 - 24 | £1.07 |
| 25 - 99 | £0.56 |
| 100 - 499 | £0.54 |
| 500 + | £0.53 |
*price indicative
- RS Stock No.:
- 735-121
- Mfr. Part No.:
- SQ4917CEY-T1_BE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | P-Channel | |
| Maximum Continuous Drain Current Id | -8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SO-8 | |
| Series | SQ4917CEY | |
| Mount Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.048Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.2V | |
| Typical Gate Charge Qg @ Vgs | 41nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 6.8W | |
| Maximum Operating Temperature | 175°C | |
| Width | 6.2mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type P-Channel | ||
Maximum Continuous Drain Current Id -8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SO-8 | ||
Series SQ4917CEY | ||
Mount Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.048Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.2V | ||
Typical Gate Charge Qg @ Vgs 41nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 6.8W | ||
Maximum Operating Temperature 175°C | ||
Width 6.2mm | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- DE
The Vishay Power MOSFET offers high performance in automotive applications, delivering robust dual P-channel configurations that handle voltages up to 60 V and temperatures up to 175 °C.
TrenchFET technology ensures low on-state resistance
Offers a maximum continuous drain current of -8 A per leg
Related links
- Vishay SQ4917CEY 4 Type P-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4917CEY-T1_GE3
- Vishay SQ4946CEY Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8 SQ4946CEY-T1_BE3
- Vishay TrenchFET Dual N-Channel MOSFET 60 V Enhancement, 8-Pin SO-8L SQJ968EP-T1_BE3
- Vishay SQ2337CES P-Channel MOSFET 80 V Enhancement, 3-Pin SOT-23-3 SQ2337CES-T1_BE3
- Vishay SQS484CENW N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_BE3
- Vishay SQS840CENW N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8W SQS840CENW-T1_BE3
- Vishay Type N 8 A 8-Pin SO-8 SI4534DY-T1-GE3
- Vishay Si7309DN Type P-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212-8 SI7309DN-T1-E3
