DiodesZetex BSS123WQ N channel-Channel MOSFET, 170 mA, 100 V Enhancement, 3-Pin SOT-23 BSS123WQ-7-F

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£0.37

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£0.445

(inc. VAT)

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5 - 120£0.074£0.37
125 - 495£0.066£0.33
500 - 2495£0.06£0.30
2500 +£0.05£0.25

*price indicative

RS Stock No.:
718-532
Mfr. Part No.:
BSS123WQ-7-F
Brand:
DiodesZetex
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Brand

DiodesZetex

Product Type

MOSFET

Channel Type

N channel

Maximum Continuous Drain Current Id

170mA

Maximum Drain Source Voltage Vds

100V

Series

BSS123WQ

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

200mW

Maximum Gate Source Voltage Vgs

20V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Width

2.2mm

Length

2.2mm

Height

1mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN
The DiodesZetex N Channel enhancement mode MOSFET designed for efficient power management applications. This component is engineered to exhibit low on-state resistance while ensuring high-speed switching performance. It features a robust 100V drain-source voltage rating and is suitable for a range of automotive applications, thanks to its AEC-Q101 qualification and compliance with industry standards, such as IATF 16949. With a small footprint in the SOT323 package and a lead-free, green design, this MOSFET is an Ideal choice for space-constrained environments requiring reliable functionality and environmental compliance.

Low gate threshold voltage enhances efficiency in circuit designs

Exhibits low input capacitance for Faster switching speeds

Compatible with high drain-source voltage ratings ensuring durability

Designed with minimal input/output leakage under typical operating conditions

AEC-Q101 qualified for suitability in automotive applications

PPAP capable, suitable for industries requiring strict change control

Constructed from lead-free materials fully compliant with RoHS directives

Compact SOT323 package allows easy integration into designs

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