ROHM RD3L08CBLHRB N-Channel MOSFET, 80 A, 60 V, 3-Pin DPAK RD3L08CBLHRBTL

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Subtotal 20 units (supplied on a continuous strip)*

£18.10

(exc. VAT)

£21.72

(inc. VAT)

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Units
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20 - 48£0.905
50 - 198£0.81
200 - 998£0.655
1000 +£0.64

*price indicative

Packaging Options:
RS Stock No.:
687-440P
Mfr. Part No.:
RD3L08CBLHRBTL
Brand:
ROHM
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Brand

ROHM

Channel Type

N

Maximum Continuous Drain Current

80 A

Maximum Drain Source Voltage

60 V

Package Type

TO-252 (TL)

Series

RD3L08CBLHRB

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

COO (Country of Origin):
JP
The ROHM N channel power MOSFET designed for demanding applications, offering excellent efficiency and reliability. With a maximum drain-source voltage of 60V and a continuous drain current of 80A, this device is ideal for switching and amplification tasks in automotive and consumer electronics. Its low on-resistance of just 5.3mΩ maximises power efficiency, while its robust construction ensures it withstands harsh operational environments, meeting AEC-Q101 qualifications and providing 100% avalanche testing for enhanced safety. This MOSFET represents a powerful solution for advanced circuitry, blending performance with stringent compliance standards.

Low on resistance of 5.3mΩ significantly improves energy efficiency
Supports up to 80A continuous drain current for robust performance in demanding applications
100% avalanche tested to ensure stability and reliability during operation
AEC Q101 qualified, making it suitable for automotive applications
Wide operating junction temperature range from -55°C to +175°C ensures reliable performance in various conditions
Integrated thermal resistance of junction-case optimises power handling capabilities
Pb free and RoHS compliant, aligning with modern environmental standards.