ROHM HP8KF7H Dual N-Channel Single MOSFETs, 150 V Enhancement, 8-Pin HSOP-8 HP8KF7HTB1

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Subtotal (1 tape of 2 units)*

£2.54

(exc. VAT)

£3.04

(inc. VAT)

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Units
Per unit
Per Tape*
2 - 18£1.27£2.54
20 - 48£1.12£2.24
50 - 198£1.005£2.01
200 - 998£0.81£1.62
1000 +£0.79£1.58

*price indicative

Packaging Options:
RS Stock No.:
687-364
Mfr. Part No.:
HP8KF7HTB1
Brand:
ROHM
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Brand

ROHM

Channel Type

Dual N

Product Type

Single MOSFETs

Maximum Drain Source Voltage Vds

150V

Series

HP8KF7H

Package Type

HSOP-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

62mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

26W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Operating Temperature

150°C

Length

6.1mm

Standards/Approvals

RoHS

Height

1.1mm

Automotive Standard

No

The ROHM N channel power MOSFET designed to efficiently manage power in various electronic applications. With a low on-resistance of 62mΩ and a compact HSOP8 package, this MOSFET ensures superior thermal management and high reliability. Its specifications support a continuous drain current of ±18.5A, making it ideal for demanding tasks such as motor drives. Offering excellent energy efficiency and compliance with RoHS and halogen-free standards, it seamlessly integrates into advanced electronic designs while ensuring environmental responsibility.

Optimised for low on resistance, enhancing overall efficiency

Compact HSOP8 package allows for space-saving designs

Ideal for a variety of applications, including motor drives

Meets RoHS and halogen-free requirements for environmental safety

High continuous and pulsed drain current ratings ensure reliability under load

Excellent thermal management with low thermal resistance ratings

Designed for high-performance switching applications with minimal delay

Stable operation across a wide temperature range from -55 to +150°C

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