Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-189
- Mfr. Part No.:
- SQS201CENW-T1_GE3
- Brand:
- Vishay
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- RS Stock No.:
- 653-189
- Mfr. Part No.:
- SQS201CENW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Single MOSFETs | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Package Type | PowerPAK | |
| Series | SQS201CENW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -1.1V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.41mm | |
| Length | 3.30mm | |
| Width | 3.30mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Single MOSFETs | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds -100V | ||
Package Type PowerPAK | ||
Series SQS201CENW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -1.1V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Height 0.41mm | ||
Length 3.30mm | ||
Width 3.30mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay SQS201CENW Series Single MOSFETs, 100V Maximum Drain Source Voltage, 16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3
This single MOSFETs device is a P‑channel enhancement MOSFET designed for power switching in demanding electronic systems. It operates over a broad ambient range and is suitable for PCB mounting in environments requiring high drain voltage capability and significant continuous current handling.
Features and Benefits:
• 100V drain withstand for high-voltage switching capability
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
• 16A continuous current for heavy-load conduction
• 62.5W power dissipation enables sustained power handling
• 0.0800Ω low Rds(on) reduces conduction losses
• 26nC typical gate charge for efficient switching control
• ±20V gate tolerance supports robust drive signalling
Applications
• Suitable for high-voltage load switching in automotive electronics
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
• Ideal for reverse-polarity protection circuits in power rails
• Used with DC-DC converters requiring low conduction loss
• Can be used for motor driver high-side switching stages
• Appropriate for telematics and control modules in harsh climates
What thermal extremes can the device tolerate during operation?
It is rated to operate from -55°C up to 175°C, allowing use in wide-temperature environments.
What package style and mounting method does it use for PCB assembly?
It is supplied in a PowerPAK 8‑pin package designed for direct PCB mounting to improve thermal performance.
How does the device support automotive applications?
It meets AEC‑Q101 requirements, making it suitable for vehicle electronic systems that need automotive‑grade components.
What gate drive considerations should be observed for reliable switching?
The gate can accept up to 20V relative to source and the typical gate charge is 26nC, which informs driver sizing and switching-loss calculations.
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