Vishay SQS201CENW Type P-Channel Single MOSFETs, -16 A, -100 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-189
- Mfr. Part No.:
- SQS201CENW-T1_GE3
- Brand:
- Vishay
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- RS Stock No.:
- 653-189
- Mfr. Part No.:
- SQS201CENW-T1_GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | -16A | |
| Maximum Drain Source Voltage Vds | -100V | |
| Series | SQS201CENW | |
| Package Type | PowerPAK | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.0800Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Typical Gate Charge Qg @ Vgs | 26nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 62.5W | |
| Maximum Operating Temperature | 175°C | |
| Height | 0.41mm | |
| Width | 3.30mm | |
| Length | 3.30mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id -16A | ||
Maximum Drain Source Voltage Vds -100V | ||
Series SQS201CENW | ||
Package Type PowerPAK | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.0800Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Typical Gate Charge Qg @ Vgs 26nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 62.5W | ||
Maximum Operating Temperature 175°C | ||
Height 0.41mm | ||
Width 3.30mm | ||
Length 3.30mm | ||
Standards/Approvals RoHS | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Vishay SQS201CENW Series Single MOSFETs, -100V Maximum Drain Source Voltage, -16A Maximum Continuous Drain Current - SQS201CENW-T1_GE3
This single MOSFET is a P-channel enhancement device intended for power-switching functions in electronic systems, particularly where automotive-grade robustness is required. It is designed for PCB mounting in a PowerPAK package and offers a balance of current handling and voltage capability suited to demanding industrial and vehicular control environments.
Features and Benefits:
• P-channel device enabling high-side switching in circuits • 100V drain-to-source rating allowing large voltage margins • -16A continuous drain current for substantial load capability • 0.08Ω Rds(on) minimising conduction losses under load • 26nC typical gate charge supporting moderate switching speeds • 62.5W power dissipation handling significant thermal stress
Applications
• Suitable for high-side power switching in automotive modules • Ideal for motor-drive protection and control circuits • Used for battery management and power distribution systems • Can be used for industrial automation logic-level power stages
What gate voltage limits should be observed during design?
The gate-to-source excursion must not exceed 20V to prevent device stress.
How does the device behave at temperature extremes in practice?
It is specified to operate from -55°C up to 175°C, enabling use in harsh thermal environments without exceeding its rated limits.
What package considerations affect PCB layout and cooling?
The PowerPAK 8-pin footprint influences thermal conduction paths and requires adequate PCB copper for heat dissipation to make use of the 62.5W power-handling capacity.
Are there specific standards influencing selection for automotive use?
It meets the AEC‑Q101 automotive qualification, indicating suitability for vehicle electronic applications under that standard.
Related links
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