Vishay SISS5812DN N-Channel MOSFET, 42.8 A, 80 V, 8-Pin PowerPAK SISS5812DN-T1-GE3
- RS Stock No.:
- 653-133
- Mfr. Part No.:
- SISS5812DN-T1-GE3
- Brand:
- Vishay
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In Stock
- 6,000 unit(s) ready to ship
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| Tape(s) | Per Tape | 
|---|---|
| 1 - 24 | £0.50 | 
| 25 - 99 | £0.49 | 
| 100 - 499 | £0.48 | 
| 500 - 999 | £0.41 | 
| 1000 + | £0.38 | 
*price indicative
- RS Stock No.:
- 653-133
- Mfr. Part No.:
- SISS5812DN-T1-GE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
| Select all | Attribute | Value | 
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 42.8 A | |
| Maximum Drain Source Voltage | 80 V | |
| Package Type | PowerPAK | |
| Series | SISS5812DN | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Select all | ||
|---|---|---|
| Brand Vishay | ||
| Channel Type N | ||
| Maximum Continuous Drain Current 42.8 A | ||
| Maximum Drain Source Voltage 80 V | ||
| Package Type PowerPAK | ||
| Series SISS5812DN | ||
| Mounting Type Surface Mount | ||
| Pin Count 8 | ||
| Channel Mode Enhancement | ||
| Number of Elements per Chip 1 | ||
| Transistor Material Si | ||
- COO (Country of Origin):
- CN
The Vishay TrenchFET Gen V N-Channel Power MOSFET rated for 80 V drain-source voltage. Packaged in a compact PowerPAK 1212-8S, it's ideal for AI server power solutions, DC/DC converters, and load switching.
Pb Free
Halogen free
RoHS compliant
Halogen free
RoHS compliant
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