Vishay SIRS4300DP Type N-Channel Single MOSFETs, 680 A, 30 V Enhancement, 8-Pin PowerPAK
- RS Stock No.:
- 653-096
- Mfr. Part No.:
- SIRS4300DP-T1-RE3
- Brand:
- Vishay
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| 500 + | £2.47 |
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- RS Stock No.:
- 653-096
- Mfr. Part No.:
- SIRS4300DP-T1-RE3
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | Single MOSFETs | |
| Maximum Continuous Drain Current Id | 680A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SIRS4300DP | |
| Package Type | PowerPAK | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.00040Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Power Dissipation Pd | 278W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.10mm | |
| Standards/Approvals | RoHS | |
| Length | 6.10mm | |
| Height | 0.95mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type Single MOSFETs | ||
Maximum Continuous Drain Current Id 680A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SIRS4300DP | ||
Package Type PowerPAK | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.00040Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Power Dissipation Pd 278W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 5.10mm | ||
Standards/Approvals RoHS | ||
Length 6.10mm | ||
Height 0.95mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SIRS4300DP Series Single MOSFETs, 30V Maximum Drain Source Voltage, 680A Maximum Continuous Drain Current - SIRS4300DP-T1-RE3
This single MOSFETs device is an N-channel enhancement semiconductor intended for high-current switching and power-conversion roles in industrial electronics. It is supplied in an 8-pin surface-mount PowerPAK package and is suited to demanding thermal and electrical environments where compact, low-loss switching is required.
Features and Benefits:
• 30V drain rating enables low-voltage power-stage designs • 680A continuous drain current supports heavy load switching • 0.00040Ω Rds(on) reduces conduction losses for efficiency • 84nC typical gate charge allows Faster gate transitions • 278W power dissipation manages high energy throughput • Operates to 150°C for elevated temperature applications
Applications
• Suitable for high-current DC-DC converters in automation systems • Ideal for power stages in motor drive controllers • Used for synchronous rectification in power-supply modules • Can be used for load switching in industrial power distribution • Used with parallel arrays for data-centre power racks
What gate-drive margin is acceptable for reliable switching?
The device tolerates gate voltages up to 20V
design gate drivers to operate within this limit and to achieve the typical 84nC charge for intended switching speeds.
How should thermal management be approached on a PCB?
Given the 278W dissipation capability, use large copper areas, thermal vias and direct heatsinking to the PowerPAK exposed pad to keep junction temperatures within limits.
Can it be paralleled to increase current capacity?
Paralleling is feasible provided matching Rds(on) and proper current-sharing measures are implemented, along with careful gate-drive timing to avoid imbalance.
What environmental temperature range can it tolerate during service?
The component is specified for operation down to -55°C and up to 150°C for junction or case conditions as defined in system thermal design.
What package considerations affect layout density?
The 8-pin PowerPAK surface-mount format permits Compact placement but requires attention to copper heatsinking and trace width for high-current paths.
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