Vishay SI8818EDB N-Channel MOSFET, 2.2 A, 30 V, 4-Pin PowerPAK SI8818EDB-T2-E1

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Subtotal (1 reel of 3000 units)*

£324.00

(exc. VAT)

£390.00

(inc. VAT)

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  • 6,000 unit(s) shipping from 10 October 2025
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Units
Per unit
Per Reel*
3000 +£0.108£324.00

*price indicative

RS Stock No.:
653-090
Mfr. Part No.:
SI8818EDB-T2-E1
Brand:
Vishay
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Brand

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.2 A

Maximum Drain Source Voltage

30 V

Series

SI8818EDB

Package Type

PowerPAK

Mounting Type

Surface Mount

Pin Count

4

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Si

COO (Country of Origin):
CN
The Vishay N-channel MOSFET designed for ultra-compact, high-efficiency switching in space-constrained systems. It supports up to 30 V drain-source voltage. Packaged in MICRO FOOT 0.8 mm x 0.8 mm, it utilizes TrenchFET technology to deliver low RDS(on), fast switching, and excellent thermal performance.

Pb Free
Halogen free
RoHS compliant

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