Microchip TN2510 N-Channel MOSFET, 730 mA, 100 V, 3-Pin SOT-89 TN2510N8-G

View all MOSFETs
Currently unavailable
Sorry, we don't know when this will be back in stock.
Packaging Options:
RS Stock No.:
649-584P
Mfr. Part No.:
TN2510N8-G
Brand:
Microchip
Find similar products by selecting one or more attributes.
Select all

Brand

Microchip

Channel Type

N

Maximum Continuous Drain Current

730 mA

Maximum Drain Source Voltage

100 V

Series

TN2510

Package Type

SOT-89

Mounting Type

Surface Mount

Pin Count

3

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

Si

The Microchip Low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage