Toshiba N-Channel MOSFET, 18 A, 30 V, 8-Pin TPC8027(TE12L,Q)
- RS Stock No.:
- 582-458
- Mfr. Part No.:
- TPC8027(TE12L,Q)
- Brand:
- Toshiba
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- RS Stock No.:
- 582-458
- Mfr. Part No.:
- TPC8027(TE12L,Q)
- Brand:
- Toshiba
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 18 A | |
| Maximum Drain Source Voltage | 30 V | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 3 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Maximum Power Dissipation | 1.9 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 113 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.5mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 18 A | ||
Maximum Drain Source Voltage 30 V | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 3 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Maximum Power Dissipation 1.9 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 113 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Height 1.5mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- JP