Nexperia N-Channel MOSFET, 3 A, 100 V, 3-Pin SOT-223 PHT6NQ10T,135
- RS Stock No.:
- 509-576
- Mfr. Part No.:
- PHT6NQ10T,135
- Brand:
- Nexperia
Bulk discount available
Subtotal (1 pack of 5 units)*
£2.14
(exc. VAT)
£2.57
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 15 unit(s) shipping from 13 October 2025
- Plus 5 unit(s) shipping from 13 October 2025
- Plus 4,395 unit(s) shipping from 20 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 35 | £0.428 | £2.14 |
| 40 + | £0.33 | £1.65 |
*price indicative
- RS Stock No.:
- 509-576
- Mfr. Part No.:
- PHT6NQ10T,135
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 3 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-223 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 90 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 3.7mm | |
| Length | 6.7mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 21 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.7mm | |
| Minimum Operating Temperature | -65 °C | |
Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type N | ||
Maximum Continuous Drain Current 3 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-223 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 90 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 3.7mm | ||
Length 6.7mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 21 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 1.7mm | ||
Minimum Operating Temperature -65 °C | ||
N-Channel MOSFET, 100V and Higher, Nexperia
MOSFET Transistors, NXP Semiconductors
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