N-Channel MOSFET, 45 A, 250 V, 3-Pin D2PAK Infineon IRFS4229PBF

Unavailable
RS will no longer stock this product.
RS Stock No.:
495-883
Mfr. Part No.:
IRFS4229PBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

45 A

Maximum Drain Source Voltage

250 V

Package Type

D2PAK (TO-263)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

48 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

330 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+175 °C

Length

10.67mm

Number of Elements per Chip

1

Transistor Material

Si

Width

9.65mm

Typical Gate Charge @ Vgs

72 nC @ 10 V

Minimum Operating Temperature

-40 °C

Height

4.83mm

Series

HEXFET

The Infineon IRFS4229 is the 250V single N-channel HEXFET power MOSFET PDP switch in a D2-Pak package. This HEXFET power MOSFET is specifically designed for sustain, energy recovery and past switch application.

175°C operating junction temperature for improved ruggedness
Repetitive avalanche capability for robustness and reliability