N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK Infineon IRLR8743PBF

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RS Stock No.:
495-613
Mfr. Part No.:
IRLR8743PBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

160 A

Maximum Drain Source Voltage

30 V

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.35V

Minimum Gate Threshold Voltage

1.35V

Maximum Power Dissipation

135 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Width

6.22mm

Maximum Operating Temperature

+175 °C

Number of Elements per Chip

1

Length

6.73mm

Typical Gate Charge @ Vgs

39 nC @ 4.5 V

Transistor Material

Si

Series

HEXFET

Priced to Clear

Yes

Height

2.39mm

Minimum Operating Temperature

-55 °C

Infineon HEXFET Series MOSFET, 160A Maximum Continuous Drain Current, 135W Maximum Power Dissipation - IRLR8743TRPBF


This MOSFET is designed for high-performance applications in the automation and electronics sectors. Utilising HEXFET technology, it achieves significant efficiency and reliAbility in power management. Its Ability to handle high continuous drain currents makes it suitable for a variety of industrial settings.

Features & Benefits


• Handles a maximum continuous drain current of 160A for solid performance

• Offers a maximum drain-source voltage of 30V for dependable operation

• Low Rds(on) Value of 3.9mΩ minimises power losses

• Designed as an enhancement mode transistor to improve switching efficiency

• Surface mount capabilities allow for easy integration into circuit designs

• Rated for high operating temperatures up to +175°C for improved thermal management

Applications


• High frequency synchronous buck converters in computer power supplies

• Isolated DC-DC converters in telecom systems

• Industrial power management and automation systems

• Devices requiring low gate threshold voltages for efficient switching

• Various electronic devices that demand a Compact power solution

What is the impact of high temperatures on its performance?


Operating at elevated temperatures enhances its thermal performance, allowing it to manage high power levels effectively while ensuring stability in difficult conditions.

How does this technology improve efficiency in electronic devices?


The HEXFET technology significantly reduces power losses due to its low Rds(on), allowing devices to operate efficiently under high loads while generating less heat.

Can it be used in conjunction with other semiconductors?


Yes, it can be integrated with other semiconductor components in mixed-signal circuits, enhancing overall circuit functionality and performance.

What is the significance of its surface mount design?


The surface mount design supports Compact assembly on PCBs, enhances thermal management, and optimises space in electronic applications.

N-Channel Power MOSFET 30V, Infineon


The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.