STMicroelectronics STripFET N-Channel MOSFET, 15 A, 200 V, 3-Pin TO-220 STP19NF20
- RS Stock No.:
- 414-226P
- Mfr. Part No.:
- STP19NF20
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£35.35
(exc. VAT)
£42.40
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 40 unit(s) shipping from 21 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 90 | £0.707 |
| 100 - 240 | £0.688 |
| 250 - 490 | £0.671 |
| 500 + | £0.654 |
*price indicative
- RS Stock No.:
- 414-226P
- Mfr. Part No.:
- STP19NF20
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 15 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | STripFET | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 160 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 90 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 24 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 15 A | ||
Maximum Drain Source Voltage 200 V | ||
Series STripFET | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 160 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 90 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 24 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics