Infineon IMZ SiC N-Channel MOSFET, 89 A, 750 V, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1

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RS Stock No.:
349-339
Mfr. Part No.:
IMZA75R016M1HXKSA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

89 A

Maximum Drain Source Voltage

750 V

Series

IMZ

Package Type

PG-TO247-4

Mounting Type

Through Hole

Pin Count

4

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

COO (Country of Origin):
CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.

Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control

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