Infineon IMZ SiC N-Channel MOSFET, 89 A, 750 V, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- RS Stock No.:
- 349-339
- Mfr. Part No.:
- IMZA75R016M1HXKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 unit)*
£23.20
(exc. VAT)
£27.84
(inc. VAT)
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- Shipping from 04 May 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £23.20 |
| 10 - 99 | £20.88 |
| 100 + | £19.26 |
*price indicative
- RS Stock No.:
- 349-339
- Mfr. Part No.:
- IMZA75R016M1HXKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 89 A | |
| Maximum Drain Source Voltage | 750 V | |
| Package Type | PG-TO247-4 | |
| Series | IMZ | |
| Mounting Type | Through Hole | |
| Pin Count | 4 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 89 A | ||
Maximum Drain Source Voltage 750 V | ||
Package Type PG-TO247-4 | ||
Series IMZ | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
- COO (Country of Origin):
- CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
Related links
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