MPN

Infineon Type N-Channel MOSFET, 185 A, 1200 V Enhancement FF3MR12KM1HHPSA1

RS Stock No.:: 349-315
Mfr. Part No.:: FF3MR12KM1HHPSA1
Brand:: Infineon

Infineon Type N-Channel MOSFET, 185 A, 1200 V Enhancement FF3MR12KM1HHPSA1

Subtotal (1 unit)*

£538.53

(exc. VAT)

£646.24

(inc. VAT)

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In Stock

10 unit(s) ready to ship

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Units	Per unit
1 +	£538.53

*price indicative

RS Stock No.:: 349-315
Mfr. Part No.:: FF3MR12KM1HHPSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	185A
	Maximum Drain Source Voltage Vds	1200V
	Mount Type	Screw
	Maximum Drain Source Resistance Rds	6.32mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	23 V
	Forward Voltage Vf	5.59V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	IEC 60747, IEC 60749, IEC 60068
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 185A
	Maximum Drain Source Voltage Vds 1200V
	Mount Type Screw
	Maximum Drain Source Resistance Rds 6.32mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 23 V
	Forward Voltage Vf 5.59V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 175°C
	Standards/Approvals IEC 60747, IEC 60749, IEC 60068
	Automotive Standard No

Datasheet - FF3MR12KM1HHPSA1

COO (Country of Origin):: HU

The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is housed in the well-known 62 mm packaging, combining the latest M1H chip technology for optimal performance. This module delivers high current density, making it ideal for applications that require compact yet powerful solutions. It offers low switching losses, ensuring efficient operation even at high frequencies, and features superior gate oxide reliability for enhanced durability over time.

Minimizes cooling efforts

Reduction in volume and size

Reduced system costs

Symmetrical module design

Standard construction technique