Infineon CoolSiC Type N-Channel MOSFET, 7.5 A, 1700 V Enhancement, 3-Pin PG-TO-247-3-STD-NN4.8 IMWH170R650M1XKSA1
- RS Stock No.:
- 349-110
- Mfr. Part No.:
- IMWH170R650M1XKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
£10.93
(exc. VAT)
£13.116
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 230 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 18 | £5.465 | £10.93 |
| 20 - 198 | £4.92 | £9.84 |
| 200 + | £4.535 | £9.07 |
*price indicative
- RS Stock No.:
- 349-110
- Mfr. Part No.:
- IMWH170R650M1XKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 7.5A | |
| Maximum Drain Source Voltage Vds | 1700V | |
| Package Type | PG-TO-247-3-STD-NN4.8 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 580mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 8.1nC | |
| Maximum Gate Source Voltage Vgs | 15 V | |
| Maximum Power Dissipation Pd | 88W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 7.5A | ||
Maximum Drain Source Voltage Vds 1700V | ||
Package Type PG-TO-247-3-STD-NN4.8 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 580mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 8.1nC | ||
Maximum Gate Source Voltage Vgs 15 V | ||
Maximum Power Dissipation Pd 88W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon CoolSiC 1700 V SiC Trench MOSFET is a high performance silicon carbide MOSFET designed for efficient power switching. It is 12 V / 0 V gate-source voltage compatible, making it suitable for use with most flyback controllers. Featuring a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it ensures reliable and efficient switching performance in a wide range of power applications. This MOSFET is an excellent choice for systems requiring high voltage operation and enhanced energy efficiency.
Very low switching losses
Fully controllable dv/dt for EMI optimization
The .XT interconnection technology for best in class thermal performance
Related links
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R1K0M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 1700 V, 4-Pin PG-TO247-3 IMWH170R450M1XKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R020M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R015M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R050M2HXKSA1
- Infineon IMW SiC N-Channel MOSFET 650 V, 4-Pin PG-TO247-3 IMW65R040M2HXKSA1
- Infineon CoolMOS SiC N-Channel MOSFET 950 V, 3-Pin PG-TO247-3 IPW95R130PFD7XKSA1
- Infineon IMW65 SiC N-Channel MOSFET 650 V, 3-Pin PG-TO247-3 IMW65R060M2HXKSA1