Microchip VP3203 Silicon P-Channel MOSFET, 4 A, 30 V, 3-Pin TO-92 VP3203N3-G
- RS Stock No.:
- 332-980
- Mfr. Part No.:
- VP3203N3-G
- Brand:
- Microchip
Subtotal (1 bag of 1000 units)*
£2,095.00
(exc. VAT)
£2,514.00
(inc. VAT)
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Units | Per unit | Per Bag* |
---|---|---|
1000 + | £2.095 | £2,095.00 |
*price indicative
- RS Stock No.:
- 332-980
- Mfr. Part No.:
- VP3203N3-G
- Brand:
- Microchip
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Microchip | |
Channel Type | P | |
Maximum Continuous Drain Current | 4 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | TO-92 | |
Series | VP3203 | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 1 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand Microchip | ||
Channel Type P | ||
Maximum Continuous Drain Current 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type TO-92 | ||
Series VP3203 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material Silicon | ||
The Microchip MOSFET is a low threshold, enhancement mode transistor utilizes a vertical DMOS structure and well proven, silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source to drain diode
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
High input impedance and high gain
Excellent thermal stability
Integral source to drain diode
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