STMicroelectronics STL Type N-Channel Power MOSFET, 290 A, 40 V, 8-Pin PowerFLAT STL305N4F8AG
- RS Stock No.:
- 330-574
- Mfr. Part No.:
- STL305N4F8AG
- Brand:
- STMicroelectronics
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£1.60
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£1.92
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- Shipping from 20 July 2026
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Units | Per unit |
|---|---|
| 1 - 9 | £1.60 |
| 10 - 99 | £1.44 |
| 100 - 499 | £1.33 |
| 500 - 999 | £1.24 |
| 1000 + | £1.10 |
*price indicative
- RS Stock No.:
- 330-574
- Mfr. Part No.:
- STL305N4F8AG
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 290A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | PowerFLAT | |
| Series | STL | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 65nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 167W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 290A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type PowerFLAT | ||
Series STL | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 65nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 167W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
RoHS Status: Exempt
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel enhancement mode Power MOSFET designed in STripFET F8 technology, featuring an enhanced trench gate structure. It delivers a state-of-the-art figure of merit with very low on-state resistance, reduced internal capacitances, and gate charge, enabling faster and more efficient switching.
100% avalanche tested
Low gate charge Qg
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