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Infineon HEXFET P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF

RS Stock No.:: 301-316P
Mfr. Part No.:: IRLML6401TRPBF
Brand:: Infineon

Infineon HEXFET P-Channel MOSFET, 4.3 A, 12 V, 3-Pin SOT-23 IRLML6401TRPBF

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Subtotal 50 units (supplied on a reel)*. Quantities below 150 on continuous strip

£14.50

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£17.50

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In Stock

239,300 unit(s) ready to ship

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Units	Per unit
50 - 245	£0.29
250 - 495	£0.222
500 - 1245	£0.188
1250 +	£0.154

*price indicative

RS Stock No.:: 301-316P
Mfr. Part No.:: IRLML6401TRPBF
Brand:: Infineon

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	4.3 A
	Maximum Drain Source Voltage	12 V
	Series	HEXFET
	Package Type	SOT-23
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	50 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	0.95V
	Minimum Gate Threshold Voltage	0.4V
	Maximum Power Dissipation	1.3 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-8 V, +8 V
	Typical Gate Charge @ Vgs	10 nC @ 5 V
	Width	1.4mm
	Length	3.04mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Height	1.02mm
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 4.3 A
	Maximum Drain Source Voltage 12 V
	Series HEXFET
	Package Type SOT-23
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 50 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 0.95V
	Minimum Gate Threshold Voltage 0.4V
	Maximum Power Dissipation 1.3 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -8 V, +8 V
	Typical Gate Charge @ Vgs 10 nC @ 5 V
	Width 1.4mm
	Length 3.04mm
	Number of Elements per Chip 1
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Height 1.02mm
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.2V

P-Channel Power MOSFET 12V to 20V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 4.3A Maximum Continuous Drain Current, 1.3W Maximum Power Dissipation - IRLML6401TRPBF

This P-Channel MOSFET is designed for efficiency, making it suitable for applications that demand effective power management. Utilising HEXFET technology, it provides low on-resistance, resulting in reduced power loss during operation. The robust design enables it to endure high temperatures, making it suitable for environments where performance is essential.

Features & Benefits

• Advanced processing for very low on-resistance
• Maximum drain source voltage of 12V
• Continuous drain current capability of 4.3A
• Junction temperature tolerance up to 150°C
• Optimised for fast switching applications, enhancing efficiency
• Compact SOT-23 package for space-efficient circuit designs

Applications

• Battery and load management systems
• Portable electronics where low-profile components are required
• Power management solutions in PCMCIA cards
• Automation systems that require dependable switching
• Electronic circuits needing a compact surface mount design

What is the impact of higher temperatures on performance?

Higher temperatures can increase the on-resistance, potentially reducing efficiency. The device operates safely up to 150°C, maintaining functionality under challenging conditions.

How does the gate threshold voltage affect operation?

The gate threshold voltage, between 0.4V and 0.95V, indicates the minimum voltage necessary to activate the device. Staying within this range ensures effective load switching.

Is this product suited for fast-switching applications?

Yes, the MOSFET facilitates quick transitions between on and off states, reducing energy loss and enhancing circuit responsiveness.

What precautions should be taken during installation?

It’s advisable to use a suitable heat sink when operating near the maximum current rating to prevent overheating. Proper soldering techniques are recommended due to its surface mount design.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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