P-Channel MOSFET, 38 A, 100 V, 3-Pin D2PAK Infineon IRF5210SPBF
- RS Stock No.:
- 301-271
- Mfr. Part No.:
- IRF5210SPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 301-271
- Mfr. Part No.:
- IRF5210SPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 38 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | D2PAK (TO-263) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 60 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 3.1 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 150 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +150 °C | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 4.69mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 38 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type D2PAK (TO-263) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 60 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 3.1 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 150 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +150 °C | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 4.69mm | ||