P-Channel MOSFET, 6.6 A, 100 V, 3-Pin DPAK Infineon IRFR9120NPBF
- RS Stock No.:
- 301-057
- Mfr. Part No.:
- IRFR9120NPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 301-057
- Mfr. Part No.:
- IRFR9120NPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 6.6 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 480 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 40 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 27 nC @ 10 V | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.39mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 6.6 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 480 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 40 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Width 6.22mm | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 27 nC @ 10 V | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Height 2.39mm | ||
Infineon HEXFET Series MOSFET, 6.6A Maximum Continuous Drain Current, 40W Maximum Power Dissipation - IRFR9120NTRPBF
This MOSFET plays a vital role in contemporary electronic circuits, especially in applications that require efficient current management. It is characterised by its ability to deliver high performance and low on-resistance, making it suitable for a wide range of electrical and electronic systems. This device is tailored to meet the requirements of sectors such as automation, electrical engineering, and other areas dependent on power management solutions.
Features & Benefits
• High continuous drain current rating of 6.6A supports effective operation
• Capable of managing voltages up to 100V for demanding applications
• Designed in DPAK TO-252 package for precise surface mounting
• Low maximum drain-source resistance of 480mΩ improves power efficiency
• Provides a gate threshold voltage range of 2V to 4V for dependable control
• Supports enhancement mode operation to enhance switching performance
Applications
• Utilised for power management in automation systems
• Employed in DC-DC converter designs
• Suitable for high current switching in industrial equipment
• Integrated into power supply circuits for efficient performance
• Applicable in inverter circuits and motor control
What is the optimal operating temperature for this product?
The optimal operating temperature ranges from -55°C to +150°C, allowing efficient performance in various environments.
How can the gate threshold voltage influence performance?
The maximum gate threshold voltage impacts switching behaviour; the defined range of 2V to 4V ensures reliable on/off conditions.
Is there a specific method for mounting this device?
It is designed for surface mount applications, particularly within the DPAK TO-252 footprint, facilitating integration into PCB layouts.
What does the low RDS(on) mean for my circuit?
A low RDS(on) helps minimise power loss during operation, enhancing overall system efficiency and reducing heat generation.
Can this product handle reverse current?
Yes, it possesses characteristics suitable for effectively managing reverse currents, ensuring stability in various applications.
