Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET, 63 A, 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
- RS Stock No.:
- 284-900
- Mfr. Part No.:
- IPT65R040CFD7XTMA1
- Brand:
- Infineon
Save 30% when you buy 1000 units
Subtotal (1 unit)*
£7.33
(exc. VAT)
£8.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 96 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £7.33 |
| 10 - 99 | £6.60 |
| 100 - 499 | £6.08 |
| 500 - 999 | £5.64 |
| 1000 + | £5.06 |
*price indicative
- RS Stock No.:
- 284-900
- Mfr. Part No.:
- IPT65R040CFD7XTMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 63 A | |
| Maximum Drain Source Voltage | 650 V | |
| Package Type | PG-HSOF-8 | |
| Series | 650V CoolMOS CFD7 SJ Power Device | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Channel Mode | Enhancement | |
| Transistor Material | SiC | |
| Number of Elements per Chip | 1 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 63 A | ||
Maximum Drain Source Voltage 650 V | ||
Package Type PG-HSOF-8 | ||
Series 650V CoolMOS CFD7 SJ Power Device | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Channel Mode Enhancement | ||
Transistor Material SiC | ||
Number of Elements per Chip 1 | ||
The Infineon MOSFET is a cutting edge MOSFET designed for high efficiency switching applications. This product exemplifies superior thermal performance, making it ideal for use in demanding environments such as server and telecom sectors. With its innovative CoolMOS CFD7 technology, it promises outstanding reliability and efficiency, particularly in resonant switching topologies, including LLC and phase shift full bridge applications. This MOSFET advances upon its predecessor with improved switching capabilities and a low on state resistance, optimising power density and enhancing the overall effectiveness of your designs. Built to meet the rigorous standards of industrial applications, the device provides excellent hard commutation ruggedness while maintaining exceptional performance across a broad temperature range.
Ultra fast body diode minimises switching losses
Best in class RDS(on) for efficiency improvements
Robust against hard commutation for reliability
Handles increased bus voltage for safety
Optimised for high power density in compact designs
Excels in light load conditions for industrial SMPS applications
Best in class RDS(on) for efficiency improvements
Robust against hard commutation for reliability
Handles increased bus voltage for safety
Optimised for high power density in compact designs
Excels in light load conditions for industrial SMPS applications
Related links
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R040CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R080CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R125CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R060CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R190CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R099CFD7XTMA1
- Infineon 650V CoolMOS CFD7 SJ Power Device SiC N-Channel MOSFET 650 V, 8-Pin PG-HSOF-8 IPT65R155CFD7XTMA1
- Infineon 650V CoolMOS SiC N-Channel MOSFET 650 V, 22-Pin PG-HDSOP-22 IPDQ65R080CFD7XTMA1