Infineon 600V CoolMOS SiC N-Channel MOSFET, 149 A, 600 V, 22-Pin PG-HDSOP-22 IPDQ60R015CFD7XTMA1

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Packaging Options:
RS Stock No.:
284-735P
Mfr. Part No.:
IPDQ60R015CFD7XTMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

149 A

Maximum Drain Source Voltage

600 V

Package Type

PG-HDSOP-22

Series

600V CoolMOS

Mounting Type

Surface Mount

Pin Count

22

Channel Mode

Enhancement

Number of Elements per Chip

1

Transistor Material

SiC

The Infineon MOSFET features a 600V CoolMOS CFD7 Power Transistor is engineered to excel in high voltage power applications, delivering unparalleled efficiency and reliability. Utilising advanced super junction technology, this product offers a seamless upgrade over its predecessor, the CFD2 series. With a design focused on soft switching applications such as phase shift full bridge converters and LLC circuits, it ensures optimal performance. Enhanced features like reduced gate charge and minimal reverse recovery charge make this transistor a go to solution for modern energy systems. Its compact PG HDSOP 22 package guarantees easy integration into existing designs, maximising power density while minimising installation complexity. The CoolMOS CFD7 is also fully compliant with JEDEC standards for industrial applications, ensuring long term stability and reliability in demanding environments.

Optimised for soft switching topologies
Ultra fast body diode for high speed switching
Integrated thermal management extends longevity
Tailored for resonant topologies boosting efficiency
Compact design simplifies PCB mounting
Maximises power density for space constraints
Robust commutation ensures reliable operation
Enhances reliability standards for industrial use