Infineon OptiMOS SiC N-Channel MOSFET, 381 A, 40 V, 8-Pin PG-WSON-8 BSC007N04LS6SCATMA1

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Packaging Options:
RS Stock No.:
284-635P
Mfr. Part No.:
BSC007N04LS6SCATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

381 A

Maximum Drain Source Voltage

40 V

Series

OptiMOS

Package Type

PG-WSON-8

Mounting Type

Surface Mount

Pin Count

8

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

1

The Infineon MOSFET is a power transistor for high performance applications requiring robust efficiency and reliability. With its dual side cooled packaging, it boasts the lowest junction to top thermal resistance, enabling superior heat dissipation. The N channel design ensures optimal performance in synchronous applications, making it an ideal choice for modern power management systems. Featuring a Pb free lead plating and RoHS compliance. Additionally, its high avalanche rating assures stability under demanding conditions, while the rated operating temperature up to 175 °C enhances its usability across various environments.

Seamless integration for synchronous applications
Meets JEDEC standards for industrial use
Advanced thermal management improves endurance
Exceptional on resistance for efficiency
Handles high avalanche energy reliably
Supports halogen free and eco conscious design