onsemi NXH Type P, Type N-Channel MOSFET, 192 A, 1.2 kV Enhancement, 44-Pin PIM44 NXH600B100H4Q2F2PG
- RS Stock No.:
- 277-057
- Mfr. Part No.:
- NXH600B100H4Q2F2PG
- Brand:
- onsemi
Subtotal (1 unit)*
£202.71
(exc. VAT)
£243.25
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 36 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £202.71 |
*price indicative
- RS Stock No.:
- 277-057
- Mfr. Part No.:
- NXH600B100H4Q2F2PG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Product Type | MOSFET | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Package Type | PIM44 | |
| Series | NXH | |
| Mount Type | Snap-in | |
| Pin Count | 44 | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 766nC | |
| Forward Voltage Vf | 1.55V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Power Dissipation Pd | 511W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Product Type MOSFET | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Package Type PIM44 | ||
Series NXH | ||
Mount Type Snap-in | ||
Pin Count 44 | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 766nC | ||
Forward Voltage Vf 1.55V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Power Dissipation Pd 511W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Hybrid Three Channel Symmetric Boost Module features two 1000V, 200A IGBTs and two 1200V, 60A SiC diodes per channel, along with an NTC thermistor for temperature monitoring. The module utilizes trench with field stop technology for high efficiency, significantly reducing switching losses and system power dissipation. Its design provides high power density, making it suitable for demanding power applications that require optimal performance and thermal management.
Low inductive layout
Low package height
Pb free
Halide free and RoHS compliant
Related links
- onsemi Isolated PowerTrench 2 Type N Type P 6.2 A 8-Pin SOIC
- onsemi Isolated 2 Type N Type P 700 mA 6-Pin SOT-363 FDG6332C
- DiodesZetex Isolated 2 Type N Type P 4.7 A 8-Pin SOIC ZXMC4559DN8TA
- DiodesZetex Full Bridge 4 Type P 3.1 A 8-Pin
- ROHM QH8MB5 Type P 5 A 8-Pin TSMT-8 QH8MB5TCR
- ROHM HT8MC5 Type P 10 A 8-Pin HSMT-8 HT8MC5TB1
- DiodesZetex Type P 10 A 8-Pin PowerDI5060-8 DMC1018UPDWQ-13
- STMicroelectronics MASTERG Type P 6.5 A 31-Pin QFN-9 MASTERGAN4LTR