onsemi NXH Type P, Type N-Channel MOSFET, 192 A, 1.2 kV Enhancement, 44-Pin PIM44 NXH600B100H4Q2F2PG
- RS Stock No.:
- 277-057
- Mfr. Part No.:
- NXH600B100H4Q2F2PG
- Brand:
- onsemi
Subtotal (1 unit)*
£202.71
(exc. VAT)
£243.25
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- 36 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 1 + | £202.71 |
*price indicative
- RS Stock No.:
- 277-057
- Mfr. Part No.:
- NXH600B100H4Q2F2PG
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type P, Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 192A | |
| Maximum Drain Source Voltage Vds | 1.2kV | |
| Series | NXH | |
| Package Type | PIM44 | |
| Mount Type | Snap-in | |
| Pin Count | 44 | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 766nC | |
| Maximum Power Dissipation Pd | 511W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 1.55V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type P, Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 192A | ||
Maximum Drain Source Voltage Vds 1.2kV | ||
Series NXH | ||
Package Type PIM44 | ||
Mount Type Snap-in | ||
Pin Count 44 | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 766nC | ||
Maximum Power Dissipation Pd 511W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 1.55V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The ON Semiconductor Hybrid Three Channel Symmetric Boost Module features two 1000V, 200A IGBTs and two 1200V, 60A SiC diodes per channel, along with an NTC thermistor for temperature monitoring. The module utilizes trench with field stop technology for high efficiency, significantly reducing switching losses and system power dissipation. Its design provides high power density, making it suitable for demanding power applications that require optimal performance and thermal management.
Low inductive layout
Low package height
Pb free
Halide free and RoHS compliant
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