ROHM R60 Type N-Channel MOSFET, 600 V Enhancement, 3-Pin SOT-223-3 R6002JND4TL1
- RS Stock No.:
- 264-855
- Mfr. Part No.:
- R6002JND4TL1
- Brand:
- ROHM
Bulk discount available
Subtotal (1 tape of 25 units)*
£8.025
(exc. VAT)
£9.625
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- Shipping from 18 May 2026
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Units | Per unit | Per Tape* |
|---|---|---|
| 25 - 75 | £0.321 | £8.03 |
| 100 - 225 | £0.305 | £7.63 |
| 250 - 475 | £0.283 | £7.08 |
| 500 - 975 | £0.26 | £6.50 |
| 1000 + | £0.25 | £6.25 |
*price indicative
- RS Stock No.:
- 264-855
- Mfr. Part No.:
- R6002JND4TL1
- Brand:
- ROHM
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | SOT-223-3 | |
| Series | R60 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 3.25Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 6.6W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 7.0nC | |
| Forward Voltage Vf | 1.7V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type SOT-223-3 | ||
Series R60 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 3.25Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 6.6W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 7.0nC | ||
Forward Voltage Vf 1.7V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM 600V 1A SOT-223-3 Presto MOS with integrated high-speed diode is a power MOSFET with fast reverse recovery time, suitable for the switching applications. Which increases design flexibility while maintaining the industrys fastest reverse recovery time optimized for EV charging stations and motor drive in home appliances such as refrigerators and Air Conditioners (ACs).
Fast reverse recovery time
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating and RoHS compliant
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