Nexperia NSF030120L3A0 Type N-Channel MOSFET, 48 A, 1200 V Enhancement, 3-Pin TO-247 NSF030120L3A0Q
- RS Stock No.:
- 219-450
- Mfr. Part No.:
- NSF030120L3A0Q
- Brand:
- Nexperia
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Tape(s) | Per Tape |
|---|---|
| 1 - 9 | £23.16 |
| 10 - 99 | £20.85 |
| 100 + | £19.23 |
*price indicative
- RS Stock No.:
- 219-450
- Mfr. Part No.:
- NSF030120L3A0Q
- Brand:
- Nexperia
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 48A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NSF030120L3A0 | |
| Package Type | TO-247 | |
| Mount Type | PCB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 45mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 306W | |
| Typical Gate Charge Qg @ Vgs | 113nC | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Select all | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 48A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NSF030120L3A0 | ||
Package Type TO-247 | ||
Mount Type PCB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 45mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 306W | ||
Typical Gate Charge Qg @ Vgs 113nC | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
- COO (Country of Origin):
- CN
The Nexperia SiC Power MOSFET comes in a Compact 3-pin TO-247-3 plastic package for through hole mounting on PCBs. Its excellent RDS(on) temperature stability and fast switching speed make it Ideal for high-power, high-voltage industrial applications, including electric vehicle charging infrastructure, photovoltaic inverters, and motor drives.
Fast reverse recovery
Fast switching speed
Temperature independent turn off switching losses
Very fast and robust intrinsic body diode
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