STMicroelectronics STripFET II N-Channel MOSFET, 12 A, 60 V Enhancement, 3-Pin TO-252 STD12NF06T4
- RS Stock No.:
- 151-936
- Mfr. Part No.:
- STD12NF06T4
- Brand:
- STMicroelectronics
Bulk discount available
View bulk pricing optionsSubtotal (2500 units, on reels of 2500)*
£775.00
(exc. VAT)
£925.00
(inc. VAT)
FREE delivery for orders over £60.00
Temporarily out of stock
- Shipping from 25 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | £0.31 | £775.00 |
| 5000 + | £0.303 | £757.50 |
*price indicative
- RS Stock No.:
- 151-936
- Mfr. Part No.:
- STD12NF06T4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | STripFET II | |
| Package Type | TO-252 | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 12nC | |
| Maximum Power Dissipation Pd | 30W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS Compliant | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series STripFET II | ||
Package Type TO-252 | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 12nC | ||
Maximum Power Dissipation Pd 30W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS Compliant | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET series has been developed using STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in Advanced high efficiency isolated DC to DC converters for telecom and computer applications.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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