STMicroelectronics STripFET N-Channel MOSFET, 75 A, 200 V Enhancement, 3-Pin TO-263 STB75NF20
- RS Stock No.:
- 151-920
- Mfr. Part No.:
- STB75NF20
- Brand:
- STMicroelectronics
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Units | Per unit | Per Tape* |
|---|---|---|
| 2 - 18 | £5.45 | £10.90 |
| 20 - 48 | £4.705 | £9.41 |
| 50 + | £3.78 | £7.56 |
*price indicative
- RS Stock No.:
- 151-920
- Mfr. Part No.:
- STB75NF20
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 75A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-263 | |
| Series | STripFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.034Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | 50°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 84nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.6mm | |
| Length | 15.85mm | |
| Standards/Approvals | RoHS | |
| Width | 10.4mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 75A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-263 | ||
Series STripFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.034Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature 50°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 84nC | ||
Maximum Operating Temperature 150°C | ||
Height 4.6mm | ||
Length 15.85mm | ||
Standards/Approvals RoHS | ||
Width 10.4mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics Power MOSFET realized with unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in Advanced high efficiency isolated DC to DC converters.
Exceptional dv/dt capability
100% avalanche tested
Low gate charge
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